NTD3055L170, NVD3055L170
20
V GS = 10 V
16
V DS ≥ 10 V
16
12
8V
6V
5V
12
8
8
4V
4
3.5 V
3V
4
T J = 25 ° C
T J = 100 ° C
T J = ? 55 ° C
0
0
1
2
3
4
5
6
7
8
0
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.35
0.3
0.25
0.2
0.15
0.1
0.05
V GS = 10 V
T J = 100 ° C
T J = 25 ° C
T J = ? 55 ° C
0.35
0.3
0.25
0.2
0.15
0.1
0.05
V GS = 15 V
T J = 100 ° C
T J = 25 ° C
T J = ? 55 ° C
0
4
6
8
10
12
14
16
18
0
4
8
12
16
20
24
I D , DRAIN CURRENT (AMPS)
Figure 3. On ? Resistance versus
Gate ? to ? Source Voltage
I D , DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance versus Drain Current
and Gate Voltage
2.2
2
1.8
I D = 4.5 A
V GS = 5 V
1000
V GS = 0 V
T J = 150 ° C
1.6
1.4
1.2
1
0.8
100
10
T J = 125 ° C
T J = 100 ° C
0.6
? 50 ? 25
0
25
50
75
100
125
150
175
1
0
10
20
30
40
50
60
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
versus Voltage
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相关代理商/技术参数
NTD3055L170-1 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170-1G 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD3055L170G 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD3055L170T4 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD3055L170T4G 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD3055L170T4H 制造商:ON Semiconductor 功能描述:
NTD30N02 制造商:ON Semiconductor 功能描述:Power MOSFET 30Amps, 24Volts N-Channel DPAK
NTD30N02G 功能描述:MOSFET NFET 24V 0.014R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube